Separation and Validation of Bond-Wire and Solder Layer Failure Modes in IGBT Modules

Thermal stress of the power semiconductor is one most important indicators for reliability assessment electronics-based systems. The mapping Insulated-Gate Bipolar Transistor (IGBT) junction temperature usually required to analyze thermal and loss dissipation. However, it difficult identify inherent mechanisms bond-wire solder layer failure modes in IGBT modules. In order solve problem, an online method modules proposed. This can separate root causes lift-off fatigue by measuring on-state voltage drop through a sinusoidal loading current based on H-bridge circuit, together with its corresponding control measurement. By comparing on-state at intersection peak converter, wear-out conditions be monitored real-time determination different modes. Finally, experimental results are presented verify effectiveness feasibility proposed method.